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SpinTJ-030: Magnetic Tunneling Junction Microsensor-SMA

Low-field magnetic tunnel junction (a.k.a Tunneling Magnetoresistance) microsensor in SMA package.
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Product Code: SpinTJ-030

50 in stock

$0.00


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Description

The STJ-030 is Micro Magnetics' low-field magnetic tunnel junction (a.k.a tunneling magnetoresistance) microsensor in SMA package. It features a Micro Magnetics SpinTJ sensor with an active (sensing) area of just a few microns (~0.0001") in size. This allows the STJ-030 to detect field signatures from single magnetic particles or microscopic magnetic media.

The field sensitivity of the STJ-030 is 5 nT, which is ten thousand times smaller than the magnetic field of the Earth. The geometry of the STJ-030 probe makes it perfect for magnetic imaging of currency, magnetic films, or media.

The STJ-030 is a two-terminal device which is accessed through a standard SMA connector.

Please review these other products:
SpinTJ-001: Magnetic Tunneling Junction Microsensor-Bare Die
Low-field magnetic tunnel junction (a.k.a. Tunneling Magnetoresistance) microsensor in die form.
Please call for price!
Our Price: $0.00

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Features
  • Superior field sensitivity of 5 nanotesla
  • Active areas as small as 1x2 microns
  • On-board ESD protection
  • Small size
  • Compact SMA connector
  • Optional sensor polishing allows an approach distance of < 5 microns (0.0002")
Applications
The STJ-030 is a low-field magnetic sensor probe designed for magnetic imaging and scanning applications. Publications
Technical Specification

PHYSICAL Min. Typical Max. Unit
Die Size 1.27 x 1.27 mm
Die Thickness 0.25 0.3 mm
Active Area Length 4 μm
Active Area Width 2 μm
Active Area Thickness 60 100 nm
Die Edge-to-Sensor Distance 75 175 200 μm
ELECTRICAL
Sensor Resistance 100 2000 50000 Ω
Lead Resistance 50 90 500 Ω
Recommended Operating Voltage 0.01 0.2 0.4 V
Maximum Operating Frequency 1 5 25 MHz
MAGNETIC
Total 4-Point Magnetoresistance 40 80 200 %
Magnetic Field Sensitivity 0.5 0.8 1.5 %/G
Non-linearity (+/- 1G) 0.25 2 %
Hysteresis (field range = +/- 1G) 0.01 0.05 G
Non-linearity (+/- 10G) 0.5 5 %
Hysteresis (field range = +/- 10G) 0.5 2 G
Equivalent Field Noise (100 Hz) 50 90 250 nT/Hz^2
Equivalent Field Noise (10 kHz) 5 10 25 nT/Hz^2

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