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SpinTJ-001: Magnetic Tunneling Junction Microsensor-Bare Die

Low-field magnetic tunnel junction (a.k.a. Tunneling Magnetoresistance) microsensor in die form.
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Product Code: SpinTJ-001

1000 in stock

$0.00


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Description

The STJ-001 is Micro Magnetics' low-field magnetic tunnel junction (a.k.a tunneling magnetoresistance) microsensor in die form. The sensor die features a Micro Magnetics SpinTJ sensor with an active (sensing) area of just a few microns (~0.0001") in size. The die is 1.9 mm square and 300 microns thick. It has four gold wirebonding pads which allow four-point measurement of the device resistance. The active area of the sensor is located at one corner of the die to allow the sensitive region to be brought very close to another object.

The field sensitivity of the STJ-001 is 5 nT, which is ten thousand times smaller than the magnetic field of the Earth.

Micro Magnetics also offers custom solutions -- we design and build custom sensing products which are tailored to the customer's specific application.
 
 
Please review these other products:
SpinTJ-020: Magnetic Tunneling Junction Microsensor-Probe
Low-field magnetic tunnel junction (a.k.a Tunneling Magnetoresistance) microsensor in probe package for magnetic imaging and scanning applications.
Please call for price!
Our Price: $0.00

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Features
  • Superior field sensitivity of 5 nanotesla
  • Active areas as small as 1x2 microns
  • Designed for four-wire measurement
  • Optional sensor polishing allows an approach distance of < 5 microns (0.0002")
Applications
Magnetic Sensing
Technical Specification
PHYSICAL Min. Typical Max. Unit
Die Size 1.27 x 1.27 mm
Die Thickness 0.25 0.3 mm
Active Area Length 4 μm
Active Area Width 2 μm
Active Area Thickness 60 100 nm
Die Edge-to-Sensor Distance 75 175 200 μm
ELECTRICAL
Sensor Resistance 100 2000 50000 Ω
Lead Resistance 50 90 500 Ω
Recommended Operating Voltage 0.01 0.2 0.4 V
Maximum Operating Frequency 1 5 25 MHz
MAGNETIC
Total 4-Point Magnetoresistance 40 80 200 %
Magnetic Field Sensitivity 0.5 0.8 1.5 %/G
Non-linearity (+/- 1G) 0.25 2 %
Hysteresis (field range = +/- 1G) 0.01 0.05 G
Non-linearity (+/- 10G) 0.5 5 %
Hysteresis (field range = +/- 10G) 0.5 2 G
Equivalent Field Noise (100 Hz) 50 90 250 nT/Hz^2
Equivalent Field Noise (10 kHz) 5 10 25 nT/Hz^2

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